Comparative Study on GaN FET and Si-MOSFET Power Losses for a High-density and High-efficient LED Power Driving circuit
This paper presents a comparative analysis of silicon metal oxide silicon field effect transistor (Si-MOSFET) and gallium nitride field effect transistor (GaN FET) power losses for implementing of a high-density and high-efficiency light emitting diode (LED) power driver circuit with a conventional boost converter. This paper studies an LED power drive circuit of which supply input voltage and power consumption are targeted for the conventional electrical specification of a vehicle’s headlamp. By comparing of power losses and efficiency depending on frequency variation, this paper can offer the method of design for a high-density and high-efficiency LED power driver circuit. Also this paper presents the change of the inductor and the capacitor parameter value of the circuit according to the frequency variation.
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